- Microelectronics Reliability: “Stable reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600 °C”, Valdemar Abou Hamad, Tony Abi Tannous, Maher Soueidan, Laurent Gremillard, Damien Fabregue, Jose Penuelas, Youssef Zaatar - Applied Surface Science: “Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing”, T. Abi-Tannous, M. Soueidan, G. Ferro, M. Lazar, B. Toury, J.F. Barbot, J. Penuelas and D. Planson. - IEEE-TED: “a study on the temperature of ohmic contacte to p-type SiC based on Ti3SiC2 phase”, Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Christophe Raynaud, Bérangère Toury, Marie-France Beaufort, Jean-Francois Barbot, Olivier Dezellus, and Dominique Planson. - Journal of Crystal Growth: “Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport”, Alexandre Jaud, Laurent Auvray, Abdelkarim Kahouli, Tony Abi-Tannous, Sébastien Linas, Gabriel Ferro and Christian Brylinski. - Physica Status Solidi a: “Highly Mg-doped GaN dots and films grown by VLS transport at low temperature”, Alexandre Jaud, Laurent Auvray, Abdelkarim Kahouli, Tony Abi-Tannous, François Cauwet, Gabriel Ferro, and Christian Brylinski. - “Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase”, T. Abi-Tannous, M. Soueidan, G. Ferro, M. Lazar, C. Raynaud, B. Gardiola and D. Planson. - “A study on the chemistry of epitaxial Ti3SiC2 formation on 4H-SiC using Al-Ti annealing”, T. Abi-Tannous, M. Soueidan, G. Ferro, M. Lazar, B. Toury, M.F. Beaufort, J.F. Barbot, J. Penuelas and D. Planson. - “Nouveaux contacts électriques sur SiC-4H de type p à base de carbure Ti3SiC2”, T. Abi-Tannous - “Nouveaux contacts électriques sur SiC-4H de type p: réalisation de phases MAX”, T. Abi-Tannous, M. Soueidan, G. Ferro, M. Lazar, B. Toury, J.F. Barbot, J. Penuelas et D. Planson.